2sK1835 silicon n-channel mos fet application high speed power switching features high breakdown voltage (v dss = 1500v) high speed switching low drive current no secondary breakdown suitable for switchingregulator outline and equivalent circuit to-3p 1. gate 2. drain (flange) 3. source d g s 1 2 3
2sK1835 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 20 v drain current i d 4a drain peak current i d(pulse) * 1 10 a body to drain diode reverse drain current i dr 4a channel dissipation pch* 2 125 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2sK1835 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 1500 v i d = 10 ma, v gs = 0 gate to source leak current i gss 1 m av gs = 20 v, v ds = 0 zero gate voltage drain current i dss 500 m av ds = 1200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 4.6 7.0 w i d = 2 a v gs = 15 v* 1 forward transfer admittance |y fs | 0.9 1.4 s i d = 2 a v ds = 20v* 1 input capacitance ciss 1700 pf v ds = 10 v output capacitance coss 230 pf v gs = 0 reverse transfer capacitance crss 100 pf f = 1 mhz turn-on delay time t d(on) 25 ns i d = 2a rise time t r 80 ns v gs = 10 v turn-off delay time t d(off) 230 ns r l = 15 w fall time t f ?0?s body to drain diode forward voltage v df 0.85 v i f = 4 a, v gs = 0 body to drain diode reverse recovery time t rr 2500 ns i f = 4 a, v gs = 0, di f / dt = 100 a / m s note 1. pulse test
2sK1835 4 200 150 100 50 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating 50 30 10 3 1 0.3 0.1 0.05 10 30 100 300 1000 3000 10000 1 ms pw = 10 ms (1 shot) drain current i (a) d operation in this area is ilmited by r (on) ds drain to source voltage v (v) ds 10 s m 100 s m ta = 25? dc operation (tc = 25?) maximum safe operation area 5 4 3 2 1 0 10 20 30 40 50 pulse test 10 v 8 v 6 v 5 v drain current i (a) d drain to source voltage v (v) ds v = 4 v gs typical output characteristics 5 4 3 2 1 02 4 6810 gate to source voltage v (v) gs drain current i (a) d pulse test tc = ?5? 25? 75? v = 20 v ds typical transfer characteristics
2sK1835 5 25 20 15 10 5 0 4 8 12 16 20 gate to source voltage v (v) pulse test 3 a 2 a i = 1 a d drain to source saturation voltage v (on) (v) ds gs drain to source saturation voltage vs. gate to source voltage 50 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 20 drain current i (a) d static drain?ource on state resistance r (on) ( ) ds w v = 10 v gs 15 v pulse test static drain to source on state resistance vs. drain current 25 20 15 10 5 0 0 ?0 40 80 120 160 case temperature t (?) c static drain?ource on state resistance r (on) ( ) w ds pulse test 1 a 2 a i = 3 a d v = 15 v gs static drain to source on state resistance vs. temperature 10 5 2 1 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 forward transfer admittance |y | (s) drain current i (a) d tc = ?5? 25? 75? pulse test v = 20 v ds fs forward transfer admittance vs. drain current
2sK1835 6 5000 2000 1000 500 200 100 5 0.1 0.2 0.5 1 2510 reverse recovery time trr (ns) reverse drain current i (a) dr gs di / dt = 100 a / s v = 0, ta = 25? m body to drain diode reverse recovery time 1000 10000 100 10 10 20 30 40 50 ciss coss v = 0 f = 1 mhz drain to source voltage v capacitance c (pf) gs ds crss 0 typical capacitance vs. drain to source voltage 1000 800 600 400 200 0 40 80 120 160 200 0 4 8 12 16 20 drain to source voltage v (v) ds i = 4 a v = 600 v dd 250 v 400 v 250 v v = 600 v 400 v v ds v gs dd gate charge g (nc) q d gate to source voltage v (v) gs dynamic input characteristics 1000 500 200 100 50 20 10 0.05 0.1 0.2 0.5 1 2 5 tf tr td (off) drain current i (a) d switching time t (ns) v = 10 v, duty 1 % gs pw = 5 s m switching characteristics td (on)
2sK1835 7 0 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 pulse test 0,? v reverse drain current i (a) dr v = 15 v gs source to drain voltage v (v) sd 0 reverse drain current vs. source to drain voltage 10 100 1 m 10 m 100 m 10 0.01 0.03 0.1 0.3 1.0 3 pulse width pw (s) normalized transient thermal impedance s (t) g m m d = 1 0.5 0.2 0.1 0.05 0.02 1 shot pulse tc = 25? 0.01 1 q ch ?c(t) = s(t) ch ?c ch ?c = 1.0? / w, tc = 25? p d = pw t pw t dm g . q q normalized transien thermal impedance vs. pulse width
2sK1835 8 vin monitor vout monitor r v 30 v 50 vin 10 v d.u.t dd l = . . w switching time test circuit vin 10 % 90 % 90 % 90 % 10 % td (on) td (off) tr tf vout 10 % waveforms
f 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 hitachi code jedec eiaj weight (reference value) to-3p conforms 5.0 g unit: mm
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